A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
In: Proceedings of the 7th International Symposium on Quality Electronic Design; (2006-03-27) S. 127-132
Konferenz
Zugriff:
Titel: |
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
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Autor/in / Beteiligte Person: | He, Jin ; Zhang, Xing ; Zhang, Ganggang ; Wang, Yangyuan |
Link: | |
Quelle: | Proceedings of the 7th International Symposium on Quality Electronic Design; (2006-03-27) S. 127-132 |
Veröffentlichung: | 2006 |
Medientyp: | Konferenz |
DOI: | 10.1109/ISQED.2006.5 |
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